Solid-state imaging device, driving method therefor, and imaging apparatus

ABSTRACT

A solid-state imaging device includes the following: a pixel array section in which a plurality of pixels are two-dimensionally arranged, each of the pixels outputting an image signal; and a column circuit area including a plurality of column circuits. In the solid-state imaging device, a vertical signal line through which image signals from a single column of pixels are output is selectively connected to a given number, which is more than one, of the column circuits, and a signal from a selected pixel row is selectively output to one of the given number of the column circuits so that signals read out from the same pixel can be sent to the same column circuit.

CROSS REFERENCES TO RELATED APPLICATIONS

The present invention contains subject matter related to Japanese PatentApplication JP 2005-153336 filed in the Japanese Patent Office on May26, 2005, the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to solid-state imaging devices, drivingmethods therefor, and imaging apparatuses, and more particularly, to asolid-state imaging device, a driving method therefor, and an imagingapparatus that can establish a wide dynamic range by acquiring signalsof different sensitivities from one pixel and synthesizing the acquiredsignals.

2. Description of the Related Art

In the field of solid-state imaging devices, e.g., MOS (Metal OxideSemiconductor) solid-state imaging devices, a technology to achieve awide dynamic range is known. More specifically, high-sensitivity andlow-sensitivity signals are obtained from each pixel by settingdifferent storage times (exposure times), i.e., long and short storagetimes, to the pixel, and are then synthesized, whereby a wide dynamicrange can be achieved. Each pixel includes a photoelectric conversionelement, and a plurality of pixels are two-dimensionally arranged in amatrix form in a pixel array section. In addition, in the pixel arraysection, a vertical signal line is disposed for each column of thearranged pixels.

First Related Art

As one of the related arts of the above-described technology(hereinafter referred to as a “first related art”), a solid-stateimaging device having the following configurations is known. Two columncircuits (signal processing circuits), each of which is configured toperform predetermined signal processing upon a pixel signal sent througha signal line disposed for a column of pixels in a pixel array section,are disposed for each of a plurality of columns of pixels and performsignal processing in parallel upon high-sensitivity and low-sensitivitysignals sent through one signal line from one pixel, respectively (see,for example, Orly Yadid-Pecht and Eric R. Fossum, “Wide IntrasceneDynamic Range CMOS APS Using Dual Sampling”, IEEE TRANSACTIONS ONELECTRON DEVICES, VOL. 44, NO. 10, pp. 1721-1723, OCTOBER 1997).

The concept of the first related art will be described with reference toFIGS. 1A and 1B. The physical layout of a pixel array section 101 andtwo column circuit groups 102 and 103 is shown as FIG. 1A. The conceptof scanning performed upon the pixel array section 101 is shown as FIG.1B. The pixel array section 101 has 18 rows×22 columns of pixels for thesake of simplification of the drawing. Each column circuit in the columncircuit groups 102 and 103 is disposed for a column of pixels.

A scanning operation performed upon the pixel array section 101 isperformed in units of rows of pixels. The process of the scanningoperation includes two steps, i.e., an electronic shutter scanning stepfor eliminating electric charge stored in a photoelectric conversionelement included in a pixel and a readout scanning step for reading outelectric charge stored in the photoelectric conversion element. In thereadout scanning step, two scanning operations are performed.

A period of time corresponding to the period of time taken to scan thearea from a row of pixels (hereinafter referred to as a “shutter row”)upon which the electronic shutter scanning is performed to a row ofpixels (hereinafter referred to as a “readout row 1”) upon which a firstreadout scanning is performed, is defined as a storage time 1. A periodof time corresponding to the period of time taken to scan the area fromthe readout row 1 to a row of pixels (hereinafter referred to as a“readout row 2”) upon which a second readout scanning is performed, isdefined as a storage time 2. By making the storage times 1 and 2different from each other, two signals of different sensitivities, i.e.,a low-sensitivity signal and a high-sensitivity signal, can be obtained.

Referring to FIGS. 1A and 1B, the storage times 1 and 2 are periods oftime taken to scan four rows of pixels and eight rows of pixels,respectively. Therefore, a signal with twice sensitivity can be obtainedfrom each pixel in the readout row 2 compared with a signal obtainedfrom each pixel in the readout row 1. By synthesizing the two signals ofdifferent sensitivities obtained from each pixel included in the samerow of pixels in a signal processing circuit (not shown) at a subsequentstage, an image signal having a wide dynamic range can be obtained.

Second Related Art

As another related art to achieve a wide dynamic range (hereinafterreferred to as a “second related art”), a solid-state imaging devicehaving the following configurations is known. Two electronic shutterscanning operations and two readout scanning operations are performed,and by making time intervals between a first electronic shutter scanningoperation and a first readout scanning operation and between a secondelectronic shutter scanning operation and a second readout scanningoperation different from each other, two signals of differentsensitivities are obtained. Here, one column circuit is disposed for onecolumn of pixels. The two signals obtained from the two readout scanningoperations are processed in the same column circuit (see, for example,M. Mase, S. Kawahito, M. Sasaki, and Yasuo Wakamori, “A 19.5b DynamicRange CMOS Image Sensor with 12b Column-Parallel Cyclic A/D Converters”,ISSCC Dig. Tech. Papers, pp. 350-351, February 2005).

The concept of the second related art will be described with referenceto FIGS. 2A and 2B. The physical layout of a pixel array section 201 anda column circuit group 202 is shown as FIG. 2A. The concept of scanningperformed upon the pixel array section 201 is shown as FIG. 2B. Thepixel array section 201 has 18 rows×22 columns of pixels for the sake ofsimplification of the drawing. Each column circuit in the column circuitgroup 202 is disposed for a corresponding column of pixels.

Two scanning operations are performed upon the pixel array section 201.In a first scanning operation, a period of time corresponding to theperiod of time taken to scan the area from a shutter row to a readoutrow is defined as a storage time 1. In a second scanning operation, aperiod of time corresponding to the period of time taken to scan thearea from a shutter row to a readout row is defined as a storage time 2.By making the storage times 1 and 2 different from each other, twosignals of different sensitivities, i.e., a low-sensitivity signal and ahigh-sensitivity signal, can be obtained. Referring to FIGS. 2A and 2B,the storage times 1 and 2 are periods of time taken to scan four rows ofpixels and eight rows of pixels, respectively.

SUMMARY OF THE INVENTION

In the above-described first related art, two signals are acquired fromthe same pixel. The signal that is acquired when the pixel is read outin the readout row 1 is processed in the column circuit group 102, andthe signal that is acquired when the pixel is read out in the readoutrow 2 is processed in the column circuit group 103. That is, the twosignals acquired from the same pixel are processed in different columncircuits, whereby an error between the two signal levels can undesirablyoccur owing to different characteristics between the column circuitgroups 102 and 103. This signal level error causes problems when thesubsequent signal synthesis processing is performed. More specifically,owing to the signal level error, brightness does not smoothly change,color changes, and noise occurs around a connection of the high- andlow-sensitivity signals on the image with a wide dynamic range acquiredby synthesizing the image signals.

On the other hand, in the second related art, since signals of differentsensitivities output from the same pixel are processed in the samecolumn circuit, the problem of the first related art due to differentcharacteristics between column circuits does not occur. However, sincetwo scanning operations are performed, a time shift between outputtingof the high- and low-sensitivity signals occurs. The time shiftcorresponds to at least one scanning time, i.e., the period of timetaken by the read out row to move through in a pixel array section for ascanning operation. This time shift leads to the following problem.

For example, when the one scanning time takes 1/60 of a second, the timeshift between outputting of the high-and low-sensitivity signals is atleast 1/60 of a second. This means that quite a long time shift of 1/60of a second occurs compared with the storage time (exposure time) of,for example, 1/4000 or 1/500 of a second. This time shift undesirablycauses blurring of an image due to hand movement and swaying subjects.

Referring to FIG. 19.3.4 in the above-mentioned non-patent document ofthe second related art, column circuits (each of which includes a noisecanceller and a cyclic ADC) are disposed on both upper and lower sidesof a pixel array section. However, in fact, since the column circuitsdisposed on both upper and lower sides are integrated as a columncircuit, one column circuit is disposed for each column of pixels. Thisintegrated column circuit has two column-parallel circuits parallel topixel arrangement, so the column-parallel circuits are disposed on theupper and lower sides, respectively. In this non-patent document, sixscanning periods are set as one frame period.

Accordingly, it is desirable to provide a solid-state imaging device, adriving method therefor, and an imaging apparatus capable of acquiring ahigh-quality image signal by performing signal processing in the samecolumn circuit upon a plurality of signals of different sensitivitiesoutput from the same pixel and by accurately synthesizing the processedsignals of different sensitivities preventing a time shift of onescanning period between outputting of the plurality of signals.

According to embodiments of the present invention, there is provided asolid-state imaging device including the following: a pixel arraysection in which a plurality of pixels are two-dimensionally arranged,each of the pixels outputting an image signal; and a column circuit areaincluding a plurality of column circuits. In the solid-state imagingdevice, a vertical signal line through which image signals from a singlecolumn of pixels are output is selectively connected to a given number,which is more than one, of the column circuits, and a signal from aselected pixel row is selectively output to one of the given number ofthe column circuits so that signals read out from the same pixel can besent to the same column circuit.

According to embodiments of the present invention, there is provided animaging apparatus including the following: a pixel array section inwhich a plurality of pixels are two-dimensionally arranged, each of thepixels outputting an image signal; a column circuit area including aplurality of column circuits; and a signal processing portion forperforming processing upon a signal output from said column circuitarea. In the imaging apparatus, a vertical signal line through whichimage signals from a single column of pixels are output is selectivelyconnected to a given number, which is more than one, of the columncircuits, and a signal from a selected pixel row is selectively outputto one of the given number of the column circuits so that signals readout from the same pixel can be sent to the same column circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a diagram showing a concept of a first related art;

FIG. 1B is a diagram showing a concept of a first related art;

FIG. 2A is a diagram showing a concept of a second related art;

FIG. 2B is a diagram showing a concept of a second related art;

FIG. 3 is a system configuration schematic diagram showing aconfiguration of a solid-state imaging device according to a firstembodiment of the present invention;

FIG. 4 is a circuit diagram showing an exemplary circuit configurationof a pixel;

FIG. 5A is a diagram showing a concept of a method of providing a signalaccording to the first embodiment;

FIG. 5B is a diagram showing a concept of a method of providing a signalaccording to the first embodiment;

FIG. 6 is a diagram showing a concept of scanning according to the firstembodiment;

FIG. 7 is a circuit diagram showing a configuration of input stages incolumn circuits that correspond to a column of pixels;

FIG. 8 is a timing chart showing operations in a 1 H period;

FIG. 9 is a diagram showing a concept of scanning of an exemplarymodification according to the first embodiment;

FIG. 10 is a system configuration schematic diagram showing aconfiguration of a solid-state imaging device according to a secondembodiment of the present invention;

FIG. 11A is a diagram showing operations of a solid-state imaging deviceaccording to the second embodiment;

FIG. 11B is a diagram showing operations of a solid-state imaging deviceaccording to the second embodiment; and

FIG. 12 is a block diagram showing an exemplary configuration of asolid-state imaging device according to embodiments of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 3 is a system configuration schematic diagram showing aconfiguration of a solid-state imaging device according to the firstembodiment of the present invention. This embodiment will be describedby using a CMOS (Complementary Metal Oxide Semiconductor) image sensoras an example of a solid-state imaging device.

Referring to FIG. 3, a solid-state imaging device 10 according to thisembodiment has a system configuration in which the following componentsare provided: a pixel 20 that includes a photoelectric conversionelement for photoelectrically converting, for example, incident lightinto electric charge having a quantity of electric charge correspondingto an amount of incident light and outputs a signal representing anexternal physical quantity; a pixel array section 11 in which aplurality of pixels 20 are two-dimensionally arranged in a matrix form;a vertical driving circuit 12; n (n is an integer of two or more, n=2 inthis embodiment) column circuit (column-parallel signal processingcircuit) groups 13 and 14; horizontal driving circuits 15 and 16; outputcircuits 17 and 18; and a control circuit 19.

In this system configuration, the control circuit 19 externally receivesinstruction data of an operational mode, etc., for the solid-stateimaging device 10 via an interface (not shown), and externally outputsdata including information on the solid-state imaging device 10. Inaddition, the control circuit 19 generates clock signals, controlsignals, etc., used as references of operations of the vertical drivingcircuit 12, the column circuit groups 13 and 14, and the horizontaldriving circuits 15 and 16 on the basis of a vertical synchronizingsignal Vsync, a horizontal synchronizing signal Hsync, and a masterclock MCK, and then provides the generated signals to each circuit.

In the pixel array section 11, a plurality of pixels 20 are arranged ina matrix form, and a pixel driving line 21 is provided for each row ofpixels in the horizontal direction of this drawing, and a verticalsignal line 22 is provided for each column of pixels in the verticaldirection of this drawing.

Pixel Circuit

FIG. 4 is a circuit diagram showing an exemplary circuit configurationof the pixel 20.

As shown in FIG. 4, the pixel 20 having the exemplary circuitconfiguration is configured as a pixel circuit in which not only aphotoelectric conversion element such as a photodiode 23, but also fourtransistors such as a transfer transistor 24, a reset transistor 25, anamplifying transistor 26, and a selection transistor 27 are provided.Here, N-channel MOS transistors are used as these transistors 24 through27. A transfer line 211, a reset line 212, and a selection line 23 areprovided through pixels 20 in the same row of pixels as the pixeldriving line 21.

The photodiode 23 photoelectrically converts received light intophotocharge (here, electrons) that has a quantity of electric chargecorresponding to an amount of light received. A cathode of thephotodiode 23 is electrically connected to a gate of the amplifyingtransistor 26 via the transfer transistor 24. Anode electricallyconnected to the gate of the amplifying transistor 26 is called an FD(floating diffusion) portion 28. The FD portion 28 converts electriccharge into voltage.

The transfer transistor 24 is connected between the cathode of thephotodiode 23 and the FD portion 28. The transfer transistor 24 isactivated when a gate thereof receives a transfer pulse φTRF via thetransfer line 211, and then transfers photocharge having beenphotoelectrically converted and stored in the photodiode 23 to the FDportion 28.

A drain and a source of the reset transistor 25 are connected to powersource wiring Vdd and the FD portion 28, respectively. The resettransistor 25 is activated when a gate thereof receives a reset pulseφRST via the reset line 212 and then resets the FD portion 28 byallowing charge stored in the FD portion 28 to flow into the powersource wiring Vdd before signal charge is transferred from thephotodiode 23 to the FD portion 28.

The gate and a drain of the amplifying transistor 26 are connected tothe FD portion 28 and the power source wiring Vdd, respectively. Theamplifying transistor 26 outputs the potential of the FD portion 28 as areset level after the reset operation performed by the reset transistor25, and outputs the potential of the FD portion 28 as a signal levelafter signal charge is transferred from photodiode 23 to the FD portion28 by the transfer transistor 24.

A drain and a source of the selection transistor 27 are connected to,for example, a source of the amplifying transistor 26 and the verticalsignal line 22, respectively. The selection transistor 27 is activatedwhen a gate thereof receives a selection pulse φSEL via a selection line213, and sets the pixel 20 in a selection state and then passes on asignal output from the amplifying transistor 26 to the vertical signalline 22.

The selection transistor 27 may be connected between the power sourcewiring Vdd and the drain of the amplifying transistor 26.

Each of the pixels 20 may be configured with three transistors such asthe transfer transistor 24, the reset transistor 25, and a transistorcombining functions of the amplifying transistor 26 and the selectiontransistor 27 instead of the four transistors.

Referring back to FIG. 3, the vertical driving circuit 12 configuredwith a shift register or a decoder sequentially performs a selectionscanning operation upon the pixels 20 in the pixel array section 11 inunits of rows and then provides a necessary driving pulse (controlpulse) to each of the pixels 20 in the selected row via the pixeldriving lines 21.

Although not shown in this drawing, the vertical driving circuit 12 hasa configuration in which the following systems are provided: a readoutscanning system for performing a readout operation by sequentiallyselecting the pixels 20 in units of rows and reading out the signal ofeach of the pixels 20 in the selected row; and an electronic shutterscanning system for performing an electronic shutter operation byeliminating (resetting) electric charge stored in the photodiode 23included in each of the pixels 20 in the same row selected by thereadout scanning system a predetermined time before the readout scanningoperation is performed by the readout scanning system, the predeterminedtime corresponding to a shutter speed.

A period from the time when unnecessary electric charge stored in thephotodiode 23 is reset in accordance with the shutter scanning operationperformed by the electronic shutter scanning system to the time when asignal of the pixel 20 is read out in accordance with the readoutscanning operation performed by the readout scanning system correspondsto the storage time (exposure time) of signal electric charge in thepixel 20. That is, the electronic shutter operation is an operation forresetting signal electric charge stored in the photodiode 23 and causingthe photodiode 23 to start storing signal electric charge again.

A signal output from each of the pixels 20 in a selected row is providedto the column circuit group 13 or 14 via a corresponding vertical signalline 22. The column circuit groups 13 and 14 are disposed on the upperand lower sides of the pixel array section 11, respectively, so thateach column circuit in the column circuit groups 13 and 14 can bedisposed for an individual column of pixels, that is, a one-to-onecorrespondence between column circuits and columns of pixels can beachieved. The column circuit groups 13 and 14 receive a signal outputfrom each of the pixels 20 in one row in a column-by-column basis andperforms signal processing upon the received signal, the signalprocessing being, for example, signal amplification and CDS (CorrelatedDouble Sampling) for removing a fixed pattern noise specific to a pixel.Each column circuit of the column circuit groups 13 and 14 may have anA/D (analog/digital) conversion function.

The horizontal driving circuits 15 and 16 are provided so as tocorrespond to the column circuit groups 13 and 14, respectively. Thehorizontal driving circuit 15 is configured with a horizontal scanningcircuit 151, a horizontal selection switch group 152, and a horizontalsignal line 153. The horizontal scanning circuit 151 is configured witha shift register, etc., and causes the signals of a row, upon whichsignal processing has been performed in individual column circuits ofthe column circuit group 13, to be sequentially output to the horizontalsignal line 153 by sequentially selecting the switches in the horizontalselection switch group 152.

Like the horizontal driving circuit 15, the horizontal driving circuit16 is configured with a horizontal scanning circuit 161, a horizontalselection switch group 162, and a horizontal signal line 163. Thehorizontal scanning circuit 161 also performs a horizontal scanningoperation so as to cause signals of a row, upon which signal processinghas been performed in individual column circuits of the column circuitgroup 14, to be sequentially output to the horizontal signal line 163 bysequentially selecting the switches of the horizontal selection switchgroup 162.

The output circuits 17 and 18 perform various signal processingoperations upon signals sequentially sent via the horizontal selectionswitch groups 152 and 162 and the horizontal signal lines 153 and 163from each column circuit in the column circuit groups 13 and 14, andthen output the processed signals as output signals OUT1 and OUT2,respectively. Specific signal processing performed in the outputcircuits 17 and 18 may be, for example, only buffering operations, ormay be not only buffering operations but also black level controloperations, correction operations of variations in signals output fromindividual columns, signal amplification operations, color-relatedprocessing operations, etc., performed before the buffering operations.

In the solid-state imaging device 10 according to this embodiment withthe above-described configuration, the vertical driving circuit 12performs the above-described shutter scanning operation and the tworeadout scanning operations upon each pixel in the pixel array section11. In the readout scanning operations, the vertical driving circuit 12selects two readout rows 1 and 2, which are separated from each other bythe number of rows of m (m is an integer of one or more) multiplied by(2p+1) row (p=0, 1, 2, . . . ), that is, the number of rows of mmultiplied by an odd number of rows, and performs a scanning operationupon each of the selected readout rows 1 and 2, and then reads out asignal from each of the pixels 20 in the readout rows 1 and 2 to thevertical signal line 22. The two column circuit groups 13 and 14 arerespectively provided so as to correspond to the two readout rows 1 and2.

On the basis of these vertical scanning operations, a period of timecorresponding to the period of time taken to scan the area from theshutter row to the readout row 1, upon which a first scanning operationis performed, is defined as a storage time 1, and a period of timecorresponding to the period of time taken to scan the area from thereadout row 1 to the readout row 2, upon which a second scanningoperation is performed, is defined as a storage time 2. By making thestorage times 1 and 2 different from each other, two signals ofdifferent sensitivities, i.e., a low-sensitivity signal and ahigh-sensitivity signal, can be sequentially obtained. Setting of thestorage times 1 and 2 is performed by the control circuit 19. Bysynthesizing the two signals of different sensitivities in a signalprocessing circuit (not shown) at a subsequent stage, an image signalhaving a wide dynamic range can be obtained.

The solid-state imaging device 10 according to this embodiment ischaracterized by a method of changing the combinations of the tworeadout rows 1 and 2 and the two column circuit groups 13 and 14, asscanning performed by the vertical driving circuit 12 proceeds by m rowsunder the control of the control circuit 19. That is, the solid-stateimaging device 10 according to this embodiment is characterized by amethod of providing a signal output from each pixel of the pixels 20 inthe readout row 1 and a signal output from each pixel of the pixels 20in the readout row 2, i.e., two signals of different sensitivities, tothe two column circuit groups 13 and 14. However, the method isperformed under the condition that the number of rows between thereadout rows 1 and 2 is set to m by (2p+1) rows, i.e., m by an oddnumber of rows. The reason for performing the method under thiscondition will be described later.

Here, the concept of a method of providing a signal when m=1, i.e., whenthe combinations of the readout rows 1 and 2 and the two column circuitgroups 13 and 14 are changed as scanning proceeds row by row, will bedescribed with reference to FIGS. 5A and 5B. The pixel array section 11has 18 rows×22 columns of pixels for the sake of simplification of thedrawing. When a unit period of scanning is defined as H, the storagetime 1 is 4H, and the storage time 2 is 9H (p=1).

FIGS. 5A and 5B shows a relative location of the shutter row and thereadout rows 1 and 2 at a certain point. However, in fact, the same rowbecomes the readout row 1 after 4H of scanning the shutter row, andbecomes the read out row 2 after 9H of scanning the readout row 1.Consequently, two signals of different sensitivities, i.e., low-andhigh-sensitivity signals, can be sequentially obtained from each of thepixels 20 (same pixel).

At a certain point, as shown in FIG. 5A, signals output from the readoutrows 1 and 2 are provided to the column circuit groups 13 and 14,respectively. That is, a signal read out from each of the pixels 20 inthe readout row 1 is input into the corresponding column circuit of thecolumn circuit group 13 via a corresponding vertical signal line 22.Similarly, a signal read out from each of the pixels 20 in the readoutrow 2 is input into the corresponding column circuit of the columncircuit group 14 via a corresponding vertical signal line 22.

When scanning proceeds by one row, the shutter row upon which theelectronic shutter scanning is performed and two readout rows 1 and 2similarly proceed by one row. As shown in FIG. 5B, signals output fromthe readout rows 1 and 2 are provided to the column circuit groups 14and 13, respectively. That is, a signal output from each of the pixels20 in the readout row 1 is input into the corresponding column circuitof the column circuit group 14 via the corresponding vertical signalline 22. Similarly, a signal output from each of the pixels 20 in thereadout row 2 is input into the corresponding column circuit of thecolumn circuit group 13 via the corresponding vertical signal line 22.

When scanning further proceeds by one row, as shown in FIG. 5A, a signalread out from each of the pixels 20 in the readout row 1 is input intothe corresponding column circuit of the column circuit group 13 via thecorresponding vertical signal line 22. Similarly, a signal read out fromeach of the pixels in the readout row 2 is input into the correspondingcolumn circuit of the column circuit group 14 via the correspondingvertical signal line 22. Thus, each time scanning proceeds by one row,signals output from the readout rows 1 and 2 are alternately provided tothe column circuit groups 13 and 14, respectively. The concept ofscanning in this case is shown in FIG. 6.

As described previously, the following settings are used: the number ofrows between the readout rows 1 and 2 is set to an odd number; thestorage time 2 is set to the period of time obtained by multiplying aunit period of scanning H by the odd number (9H in this example); andthe combinations of the readout rows 1 and 2 and the column circuitgroups 13 and 14 are set so as to change each time scanning proceeds byone row. Consequently, as apparent from FIG. 6, two signals that havedifferent storage times and have been sequentially output from the samepixel in the odd rows are provided to the column circuit group 13together. In contrast, two signals that have different storage times andhave been sequentially output from the same pixel in the even rows areprovided to the column circuit group 14 together.

That is, two continuing signals that have storage times 1 and 2 and havebeen sequentially output from the same pixel are processed in the samecolumn circuit group 13 or 14. Accordingly, since the two signals havingdifferent storage times are not affected by the characteristicdifference between the column circuit groups 13 and 14, the two signalsof different sensitivities can be accurately synthesized in a signalprocessing circuit (not shown) at a subsequent stage, the signalprocessing circuit performing a synthesis operation so as to achieve awide dynamic range.

Since two storage times 1 and 2 are in consecutive order, there is noneed to wait for one scanning period so as to acquire two signals ofdifferent sensitivities. In addition, the time shift of one scanningperiod between outputting of two signals of different sensitivities doesnot occur. Accordingly, the case in which shutter time is short (shutterspeed is low) can be supported. For example, when the storage times 1and 2 are 1/4000 and 1/500 of a second, respectively, a shutter can betriggered at a speed of 1/500 of a second even if one scanning period is1/60 of a second.

If the storage time 2 is set to the period of time obtained bymultiplying a unit period of scanning H by an even number, two signalsthat have different storage times and have been sequentially output fromthe same pixel are processed in the column circuit groups 13 and 14,respectively, even if the combinations of the readout rows 1 and 2 andthe two column circuit groups 13 and 14 are changed each time scanningproceeds by one row. Accordingly, it is important to set the storagetime 2 to the period of time obtained by multiplying the unit period ofscanning H by an odd number. This limitation actually does not matter bymaking the storage time 2 longer than another storage time.

The above-described switching of the combinations of the readout rows 1and 2 and the column circuit groups 13 and 14 is performed under thecontrol of the control circuit 19. A specific example of the controlwill be described.

FIG. 7 is a circuit diagram showing a configuration of input stages incolumn circuits 13i and 14i that are included in the column circuitgroups 13 and 14, respectively, and correspond to a certain column ofpixels i. As shown in FIG. 7, the input stages in the column circuits13i and 14i are provided with switches SW1 and SW2 between the columncircuits 13i and 14i and corresponding ends of the vertical signal line22, respectively. The switches SW1 and SW2 are controlled to be on(closed)/off (open) in accordance with control signals 1 and 2 outputfrom the control circuit 19, respectively.

FIG. 8 is a timing chart showing operations in a 1 H period. Whensignals from the readout rows 1 and 2 are provided to the columncircuits 13i and 14i, respectively, operations based on a timerelationship shown in A of FIG. 8 are performed.

That is, when a readout operation is performed upon the readout row 1,the control signal 1 output from the control circuit 19 is in an activestate (high level). In response to the control signal 1, the switch SW1is activated, whereby two signals sequentially read out from each of thepixels 20 in the readout row 1 to the vertical signal line 22 are inputinto the column circuit 13i via the switch SW1. When a readout operationis performed upon the readout row 2, the control signal 2 output fromthe control circuit 19 is in an active state. In response to the controlsignal 2, the switch SW2 is activated, whereby two signals sequentiallyread out from each of the pixels 20 in the readout row 2 to the verticalsignal line 22 are input into the column circuit 14i via the switch SW2.

In contrast, when signals from the readout rows 1 and 2 are provided tothe column circuits 14i and 13i, respectively, operations based on thetime relation shown in B of FIG. 8 are performed.

Thus, operations in the 1 H period are completed as follows: two signalsare provided to the column circuit 13i or 14i; predetermined signalprocessing is performed upon the two signals in the column circuit 13ior 14i; and the processed two signals are horizontally transferred(horizontally output) under the control of the horizontal drivingcircuit 15 or 16. After that, the scanning operation proceeds by one rowunder the control of the vertical driving circuit 12, and theabove-described sequence of operations is started from the onset of theelectronic shutter operation.

In a case where each column circuit in the column circuit groups 13 and14 is configured as a pipelined circuit for receiving a signal via thevertical signal line 22 and successively outputting the received signalto the horizontal driving circuit 15 or 16, the horizontal transferoperation is performed in parallel with the electronic shutter operationand the readout operation. Referring to C in FIG. 8, immediately afterthe readout operation is performed on the readout row 2, the scanningoperation proceeds by one row, and the electronic shutter operation isthen started.

EXEMPLARY MODIFICATIONS

This embodiment has been described using the case in which m=1, i.e.,the combinations of the readout rows 1 and 2 and the two column circuitgroups 13 and 14 are changed as scanning proceeds by one row, by way ofexample. As shown in FIG. 9, however, the switching may be performed asscanning proceeds by two rows (m=2). In this case, the number of rowsbetween the readout rows 1 and 2 is limited to (2p+1) rows×2, i.e.,double the number of rows when m=1. That is, the storage time 2 islimited to a 4H step such as 2, 6, and 10. This limitation also does notmatter by making the storage time 2 longer than another storage time.

Similarly, other methods can be employed. For example, the storage time2 is set to a 6H step such as 3, 9, and 15 by setting the number of rowsbetween the readout rows 1 and 2 to (2p+1) rows×3, i.e., triple thenumber of rows when m=1 so that the combinations of the readout rows 1and 2 and the two column circuit groups 13 and 14 can be changed asscanning proceeds by three rows (m=3).

In this embodiment, the two column circuit groups 13 and 14 are disposedon the upper and lower sides of the pixel array section 11,respectively. However, the two column circuit groups 13 and 14 may bedisposed on the upper or lower side of the pixel array section 11together.

Furthermore, in this embodiment, each column circuit of the columncircuit groups 13 and 14 is disposed for one column of pixels in thepixel array section 11 so that a one-to-one correspondence betweencolumn circuits and columns of pixels can be achieved. However, onecolumn circuit may be shared by a plurality of columns. In this case,the column circuit is time-shared. By employing such a configuration,the horizontal length of each circuit configuring the column circuitgroups 13 and 14 can be increased, whereby the case in which a pixelpitch of the solid-state imaging device 10 is small can be supported.

Still furthermore, in this embodiment, in order to achieve a widedynamic range, each pixel in the pixel array section 11 is set in thetwo readout rows 1 and 2 so that the storage time, i.e., sensitivity ofeach of the pixels 20 can be changed in two stages. In addition, the twocolumn circuit groups 13 and 14 are provided. However, otherconfigurations can be employed.

For example, when the sensitivity is desired to be changed in n stages,the following configuration can be generally employed: the number of ncolumn circuit groups, i.e., the number of n column circuits, aredisposed for one column of pixels; and when a scanning operation isperformed upon the number of n readout rows, the relationship betweenthe n readout rows and the n column circuits are changed, as well as,the number of n rows between the n readout rows is controlled so thatoutputs from the same row can be input into the same column circuit.

For example, when the combinations of readout rows and column circuitsare desired to be cyclically changed in an n×H period by circularlychanging the combinations of read-out rows and column circuits asscanning proceeds by one row, the individual numbers of delayed rowsbetween a leading readout row and the number of n−1 succeeding readoutrows may be controlled so that the individual numbers cannot be dividedby n, as well as, the values of remainders of the division by n can bedifferent from each other. For example, when n=4, the above-describedconditions can be satisfied by setting the succeeding readout rows tothe 9th, 34th, and 131st rows from the row next to the leading readoutrow, respectively. That is, when the numbers of 9, 34, and 131 aredivided by 4, the remainders are 1, 2, and 3, respectively. An examplein the case of n=2 corresponds to the example in FIG. 6.

Alternatively, when the combinations of readout rows and column circuitsare desired to be cyclically changed in an n×m×H period by circularlychanging the combinations of readout rows and column circuits asscanning proceeds by m rows, the individual numbers of delayed rowsbetween a leading readout row and the number of n−1 succeeding readoutrows may be set to the values acquired by multiplying m by the values inthe case of m=1. The example in FIG. 9 shows the case in which n=2 andm=2.

The circular change means that when n=3, for example, (1, 2, 3)corresponding to (A, B, C) first is made to sequentially and repeatedlycorrespond to (B, C, A), (C, A, B), (A, B, C), and so on. When n=2, thecorrespondence change operation is performed between two objects.

In this embodiment, the number of readout scanning rows and the numberof column circuits are equal. However, the case in which the numbers arenot equal can also be applied to the concept of the present invention.

Second Embodiment

FIG. 10 is a system configuration schematic diagram showing aconfiguration of a solid-state imaging device according to the secondembodiment of the present invention. This embodiment will be describedby using a CMOS (Complementary Metal Oxide Semiconductor) image sensoras an example of a solid-state imaging device.

Referring to FIG. 10, a solid-state imaging device 30 according to thisembodiment has a system configuration in which the following componentsare provided: a pixel 40 that includes a photoelectric conversionelement for photoelectrically converting, for example, incident lightinto electric charge having a quantity of electric charge correspondingto an amount of the incident light and outputs a signal representing anexternal physical quantity; a pixel array section 31 in which aplurality of pixels 40 are two-dimensionally arranged in a matrix form;a vertical driving circuit 32; a column circuit group 33; a horizontaldriving circuit 34; an output circuit 35; and a control circuit 36.

In this system configuration, the control circuit 36 externally receivesinstruction data of an operational mode, etc., for the solid-stateimaging device 30 via an interface (not shown), and externally outputsdata including information on the solid-state imaging device 30. Inaddition, the control circuit 36 generates clock signals, controlsignals, etc., used as references of operations of the vertical drivingcircuit 32, the column circuit 33 and the horizontal driving circuit 34on the basis of a vertical synchronizing signal Vsync, a horizontalsynchronizing signal Hsync, and a master clock MCK, and then providesthe generated signals to each circuit.

In the pixel array section 31, a plurality of pixels 40 are arranged ina matrix form, a pixel driving line 41 is provided for each row ofpixels in the row direction of this drawing, and a vertical signal line42 is provided for each column of pixels in the vertical direction ofthis drawing. The pixel having four transistors shown in FIG. 4 orpixels having other configurations can be used as the pixel 40.

The vertical driving circuit 32 configured with a shift register or adecoder sequentially performs a selection scanning operation upon thepixels 40 in the pixel array section 31 in units of rows and thenprovides a necessary driving pulse (control pulse) to each of the pixels40 in the selected row via the pixel driving line 41. Like the verticaldriving circuit 12 according to the first embodiment, the verticaldriving circuit 32 includes a readout scanning system and an electronicshutter scanning system. However, this embodiment is characterized by amethod of scanning by means of the vertical driving circuit 32. Thedescription of the scanning method will be given later.

A signal output from each of the pixels 40 in a selected row is providedto the column circuit group 33 via the corresponding vertical signalline 42. The column circuit group 33 is disposed, for example, on thelower side of the pixel array section 31 so that each column circuit inthe column circuit group 33 can be disposed for individual columns ofpixels, that is, a one-to-one correspondence between column circuits andcolumns of pixels can be achieved. The column circuit group 33 receivesa signal output from each of the pixels 40 in a row on acolumn-by-column basis and performs signal processing such as CDS andsignal amplification upon the received signal. Each column circuit inthe column circuit group 33 may have an A/D conversion function.

The horizontal driving circuit 34 is configured with a horizontalscanning circuit 341, a horizontal selection switch group 342, and ahorizontal signal line 343. The horizontal scanning circuit 341configured with a shift register, etc., causes pixel signals to besequentially output from each column circuit in the column circuit group33 to the horizontal signal line 343 by sequentially selecting theswitches of the horizontal selection switch group 342.

The output circuit 35 performs various signal processing operations uponsignals sequentially sent via the horizontal signal line 343 from eachcolumn circuit in the column circuit group 33, and then outputs theprocessed signals. Specific signal processing performed by the outputcircuit 35 may be, for example, only a buffering operation, or may benot only buffering operation but also a black level control operation, acorrection operation of variations in signals output from individualcolumns of pixels, a signal amplification operation, a color-relatedprocessing operation, etc., performed before the buffering operation.

In the solid-state imaging device 30 with the above-describedconfiguration according to this embodiment, when a unit period ofscanning is defined as H, the vertical driving circuit 32 makes ashutter row move forward by one row in an s×H (s is an integer of two ormore) period. Moreover, the vertical driving circuit 32 makes a readoutrow move forward or backward every 1 H period as well as makes thereadout row move both forward and backward in the s×H period so that thereadout row can move forward by one row in total in the s×H period.

Here, the case in which s=2 will be described with reference to FIGS.11A and 11B. The physical layout of the pixel array section 31 and thecolumn circuit group 33 is shown as FIG. 11A. The concept of scanningperformed by the vertical driving circuit 32 is shown as FIG. 11B.

The pixel array section 31 has 18 rows×22 columns of pixels for the sakeof simplification of the drawing. In order to make the drawing easy tounderstand, the length of the horizontal axis in FIG. 11B is reduced byhalf compared with the pixel arrangement shown in FIG. 11A.

When s=2, under the control of the vertical driving circuit 32, shutterscanning proceeds by one row every 2H period. On the other hand, forexample, as shown in FIG. 11B, readout scanning moves backward by threerows and then proceeds by four rows, resulting in the readout scanningproceeding by one row every 2H period.

On the basis of this vertical scanning, the period of time from theshutter scanning operation to the first readout scanning operation isdefined as a storage time 1. The period of time from the first readoutscanning operation to the second readout scanning operation is definedas a storage time 2. By making these two storage times (exposure times)1 and 2 different from each other, two signals of differentsensitivities, i.e., a low-sensitivity signal and a high-sensitivitysignal, can be sequentially obtained from the same pixel.

Setting of the storage times 1 and 2 is performed by the control circuit19. By synthesizing the two signals of different sensitivities in asignal processing circuit (not shown) at a subsequent stage, an imagesignal having a wide dynamic range can be obtained.

The above-described characteristic vertical scanning can be easilyperformed by employing the following configuration of the verticaldriving circuit 32.

In the electronic shutter scanning system of the vertical drivingcircuit 32, a scanning interval is set to sH (2H in this embodiment)using a decoder or shift registers, whereby the above-describedcharacteristic vertical scanning can be easily performed. In the readoutscanning system of the vertical driving circuit 32, address setting isperformed using a decoder under the control of the control circuit 36,or, for example, using S (two in this embodiment) shift registers,scanning intervals of the two shift registers are individually set to2H, as well as, the time shift between scanning start times of bothshift registers is set to the storage time 2, whereby theabove-described characteristic vertical scanning can be easilyperformed.

As described previously, in the solid-state imaging device 30 includingone column circuit group in which one column circuit disposed for onecolumn of pixels in the pixel array section 31 performs processing upona signal output from a pixel in a selected row, s signals of differentstorage times can be obtained by the following operations withoutwaiting one scanning period even if only one column circuit is disposedfor one column of pixels. The operations are that a shutter row is madeto move forward by one row in an s×H period, in addition, a readout rowis made to move forward or backward every 1H period as well as move bothforward and backward in the s×H period so that the readout row can moveforward by one row in total in the s×H period.

Accordingly, like the first embodiment, the case in which shutter timeis short (shutter speed is low) can be supported. Moreover, since onecolumn circuit is disposed for one column of pixels, and since s signalsfrom the same pixel are processed in the same column circuit, the ssignals of different sensitivities can be accurately synthesized in asignal processing circuit (not shown) at a subsequent stage, the signalprocessing circuit performing a synthesis operation so as to achieve awide dynamic range.

In the solid-state imaging device 30 according to this embodiment, it isdesired that the storage time 2 is set shorter than the storage time 1.In an early stage of a scanning operation, there is a period whensignals of only one row are read out every 2H. By setting the storagetime 2 shorter than the storage time 1, the period can be shortened.

This embodiment has been described using the case in which s=2, i.e.,the storage time of one pixel 20 is changed in two stages by way ofexample. However, this embodiment is not limited to this case.Therefore, the case in which the storage time is changed in three ormore stages can also be applied. Embodiments of the present inventioncan be varied by combining techniques of the first and secondembodiments. For example, the case in which many signals are processedcan be considered.

In the above-described embodiments, each of the column circuits in thecolumn circuit groups 13, 14, and 33 is disposed for one column ofpixels in the pixel array section 11 or 31 so that a one-to-onecorrespondence between column circuits and columns of pixels can beachieved. However, one column circuit may be shared by a plurality ofcolumns.

Furthermore, the above-described embodiments have been described usingthe case in which each of the pixel array sections 11 and 31 is atetragonal lattice by way of example. However, technical ideas of thefirst and second embodiments can be applied to the case in which pixelsare not arranged in a pixel array section in a tetragonal latticepattern. In this case, the system configuration will become morecomplicated.

Still furthermore, the above-described embodiments have been describedusing the case in which all pixels are read out by way of example, butthe embodiments of the present invention can be varied by, for example,combining an all-pixel readout operation and other operations such as athinning readout operation. The electronic shutter is not necessarilyrequired. Operations according to embodiments of the present inventionmay not be necessarily always performed, but may be performed only ifrequired after maintaining the operations operable.

Still furthermore, the above-described embodiments have been describedusing the case of a solid-state imaging device in which a pixel convertsa light signal into an electric signal by way of example. However,devices other than the solid-state imaging device can be employed, ifthe devices can control sensitivity by controlling the storage time of apixel.

EXEMPLARY APPLICATIONS

Each of the above-described solid-state imaging devices 10 and 30according to the first and second embodiments of the present inventioncan be preferably used as an imaging device of an imaging apparatus suchas a video camera, a digital still camera, or a camera module for amobile device such as a mobile phone.

FIG. 12 is a block diagram showing an exemplary configuration of animaging apparatus according to the embodiments of the present invention.As shown in FIG. 12, the imaging device is configured with an opticalsystem including a lens 51, an imaging device 52, a camera signalprocessing circuit 53, etc.

The lens 51 focuses image light from a subject on an imaging surface ofthe imaging device 52. The imaging device 52 converts the image lighthaving been focused on the imaging surface by the lens 51 into anelectric signal in units of pixels and outputs the converted electricsignals. In particular, in order to achieve a wide dynamic range, theimaging device 52 outputs as pixel signals a plurality of signals ofdifferent storage times each of which is specific to individual pixels.The above-described solid-state imaging device 10 or 30 is used as thisimaging device 52.

The camera signal processing circuit 53 performs various signalprocessing operations upon image signals output from the imaging device52. As one of the various processing operations, the camera signalprocessing circuit 53 synthesizes a plurality of signals of differentstorage times sequentially sent from the imaging device 52 in units ofpixels so as to achieve a wide dynamic range.

As described previously, by using the above-described solid-stateimaging device 10 or 30 according to the first or second embodiment ofthe present invention as the imaging device 52 of an imaging apparatussuch as a video camera, an electronic still camera, or a camera modulefor a mobile device such as a mobile phone, the image quality of animage can be improved. More specifically, since each of the solid-stateimaging devices 10 and 30 can process a plurality of signals ofdifferent sensitivities output from the same pixel in the same columncircuit preventing a time shift of one scanning period betweenoutputting of the plurality of signals of different sensitivities, thecamera signal processing circuit 53 can acquire a high-quality imagesignal by accurately synthesizing the plurality of signals of differentsensitivities, whereby the image quality of an image can be improved.

All functions may not be implemented in the solid-state imaging device,but may be implemented by the entire imaging apparatus. For example, thecamera signal processing circuit 53 may implement the function ofcontrolling the imaging device 52 by including the control circuit 19 or36.

As the imaging apparatus, for example, a contact-type sensor or aradiation detection instrument that does not require the optical systemincluding the lens 51 can be used.

It should be understood by those skilled in the art that variousmodifications, combinations, subcombinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1. A solid-state imaging device comprising: a pixel array section inwhich a plurality of pixels are two-dimensionally arranged, each of thepixels outputting a signal representing an external physical quantity; avertical driving portion for performing a plurality of sets ofoperations of a selection operation of a readout row and a scanningoperation of the selected readout row in the pixel array section and forreading out a signal from each pixel in the selected and scanned readoutrows; a plurality of column circuit groups including a plurality ofcolumn circuits disposed for a single column of pixels in the pixelarray section, the plurality of column circuits individually performinga processing operation upon a signal read out from each pixel in thereadout rows; and a control portion for changing combinations of thereadout rows and the column circuit groups as the scanning operationperformed by the vertical driving portion proceeds so that signals readout from the same pixel can be sent to the same column circuit.
 2. Thesolid-state imaging device according to claim 1, wherein the verticaldriving portion performs the plurality of sets of operations of aselection operation of a readout row and a scanning operation of theselected readout row at an interval that enables the readout rows toconnect to the corresponding column groups.
 3. The solid-state imagingdevice according to claim 2, wherein each number of readout rows andcolumn circuit groups is n (n is an integer of two or more), wherein thecontrol portion controls the combinations of the readout rows and thecolumn circuit groups by circularly changing the combinations as thescanning operation proceeds by m (m is an integer of one or more) rowsin a period taken to scan m×n rows, and wherein the individual numbersof delayed rows between a leading readout row and the number of n−1succeeding readout rows are the numbers that are divisible by n withremainders whose values are different from each other, and the numbersthat are obtained by multiplying the individual values of the number ofn−1 integers by m.
 4. A driving method of a solid-state imaging deviceprovided with a pixel array section in which a plurality of pixels aretwo-dimensionally arranged, each of the pixels outputting a signalrepresenting an external physical quantity, the driving method of asolid-state imaging device comprising the steps of: performing aplurality of sets of operations of a selection operation of a readoutrow and a scanning operation of the selected row in the pixel arraysection and reading out a signal from each pixel in the selected andscanned readout rows; causing each column circuit in a plurality ofcolumn circuit groups in which a plurality of column circuits aredisposed for a single column of pixels in the pixel array section toprocess a signal read out from each pixel in the readout rows; andchanging combinations of the readout rows and the column circuit groupsduring the scanning operation so that signals read out from the samepixel in the pixel array section can be sent to the same column circuit.5. The driving method of a solid-state imaging device according to claim4, wherein each number of readout rows and column circuit groups is n (nis an integer of two or more), wherein the combinations of the readoutrows and the column circuit groups are controlled by circularly changingthe combinations as the scanning operation proceeds by m (m is aninteger of one or more) rows in a period taken to scan m×n rows, andwherein the individual numbers of delayed rows between a leading readoutrow and the number of n−1 succeeding readout rows are the numbers thatare divisible by n with remainders whose values are different from eachother, and the numbers that are obtained by multiplying the individualvalues of the number of n−1 integers by m.
 6. An imaging apparatuscomprising: a pixel array section in which a plurality of pixels aretwo-dimensionally arranged, each of the pixels outputting a signalrepresenting an external physical quantity; a vertical driving portionfor performing a plurality of sets of operations of a selectionoperation of a readout row and a scanning operation of the selectedreadout row in the pixel array section at an interval that enables theselected and scanned readout rows to connect to the corresponding columngroups, and for reading out a signal from each pixel in the selected andscanned readout rows; a plurality of column circuit groups including aplurality of column circuits disposed for a single column of pixels inthe pixel array section, the plurality of column circuits individuallyperforming a processing operation upon a signal read out from each pixelin the readout rows; and a control portion for changing combinations ofthe readout rows and the column circuit groups as the scanning operationperformed by the vertical driving portion proceeds so that signals readout from the same pixel can be sent to the same column circuit, whereinthe vertical driving portion performs the plurality of sets ofoperations of a selection operation of a readout row and a scanningoperation of the selected readout row at an interval that enables theselected and scanned readout rows to connect to the corresponding columngroups.
 7. A solid-state imaging device comprising: a pixel arraysection in which a plurality of pixels are two-dimensionally arranged,each of the pixels outputting a signal representing an external physicalquantity; a vertical scanning portion for causing a readout row forreading out a signal from each pixel in the pixel array section to movebackward or forward every 1H (H is defined as a unit period of scanningof the pixel array section), as well as, causing the readout row to moveboth backward and forward in an s×H period (s is an integer of two ormore) so that the readout row can move forward by one row in total inthe s×H period; and a column circuit group in which a single columncircuit is disposed for a single column of pixels in the pixel arraysection.
 8. The solid-state imaging device according to claim 7, whereinthe vertical scanning portion performs a shutter scanning operation foreliminating electric charge stored in each pixel in the pixel arraysection before the readout scanning operation, as well as, makes theshutter scanning operation proceed by one row in the s×H period.
 9. Adriving method of a solid-state imaging device provided with a pixelarray section in which a plurality of pixels are two-dimensionallyarranged, each of the pixels outputting a signal representing anexternal physical quantity, the driving method of a solid-state imagingdevice comprising the steps of: causing a readout row for reading out asignal from each pixel in the pixel array section to move backward orforward every 1H (H is defined as a unit period of scanning of the pixelarray section), as well as, causing the readout row to move bothbackward and forward in an s×H period (s is an integer of two or more)so that the readout row can move forward by one row in total in the s×Hperiod; and causing each column circuit in a column circuit group inwhich a single column circuit is disposed for a single column of pixelsin the pixel array section to process a signal read out from each pixelin the readout row.
 10. An imaging apparatus comprising: a pixel arraysection in which a plurality of pixels are two-dimensionally arranged,each of the pixels including a photoelectric conversion element; avertical scanning portion for causing a readout row for reading out asignal from each pixel in the pixel array section to move backward orforward every 1H (H is defined as a unit period of scanning of the pixelarray section), as well as, causing the readout row to move bothbackward and forward in an s×H period (s is an integer of two or more)so that the readout row can move forward by one row in total in the s×Hperiod; and a column circuit group in which a single column circuit isdisposed for a single column of pixels in the pixel array section. 11.The imaging apparatus according to claim 10, wherein the verticalscanning portion performs a shutter scanning operation for eliminatingelectric charge stored in each pixel in the pixel array section beforethe readout scanning operation, as well as, makes the shutter scanningoperation proceed by one row in the s×H period.
 12. An imaging apparatuscomprising: a pixel array section in which a plurality of pixels aretwo-dimensionally arranged, each of the pixels outputting a signalrepresenting an external physical quantity; a vertical driving portionfor performing a plurality of sets of operations of a selectionoperation of a readout row and a scanning operation of the selectedreadout row in the pixel array section and for reading out a signal fromeach pixel in the selected and scanned readout rows; a plurality ofcolumn circuit groups including a plurality of column circuits disposedfor a single column of pixels in the pixel array section, the pluralityof column circuits individually performing a processing operation upon asignal read out from each pixel in the readout rows; a control portionfor changing combinations of the readout rows and the column circuitgroups as the scanning operation performed by the vertical drivingportion proceeds so that signals read out from the same pixel can besent to the same column circuit; and a signal processing circuit forperforming processing upon a signal output from the column circuitgroup.
 13. A solid-state imaging device comprising: a pixel arraysection in which a plurality of pixels are two-dimensionally arranged,each of the pixels outputting an image signal; and a column circuit areaincluding a plurality of column circuits, and wherein a vertical signalline through which image signals from a single column of pixels areoutput is selectively connected to a given number, which is more thanone, of the column circuits, and wherein a signal from a selected pixelrow is selectively output to one of the given number of the columncircuits so that signals read out from the same pixel can be sent to thesame column circuit.
 14. The solid-state imaging device according toclaim 13, wherein said column circuit area is placed at both sides ofsaid pixel array section.
 15. The solid-state imaging device accordingto claim 13, wherein said column circuit area is placed at one side ofsaid pixel array section.
 16. An imaging apparatus comprising: a pixelarray section in which a plurality of pixels are two-dimensionallyarranged, each of the pixels outputting an image signal; a columncircuit area including a plurality of column circuits; and a signalprocessing portion for performing processing upon a signal output fromsaid column circuit area, wherein a vertical signal line through whichimage signals from a single column of pixels are output is selectivelyconnected to a given number, which is more than one, of the columncircuits, and wherein a signal from a selected pixel row is selectivelyoutput to one of the given number of the column circuits so that signalsread out from the same pixel can be sent to the same column circuit. 17.A method of driving a solid-state imaging device provided with a pixelarray section in which a plurality of pixels are two-dimensionallyarranged, each of the pixels outputting an image signal, the methodcomprising the steps of: providing a column circuit area including aplurality of column circuits; selectively connecting images signalsoutput by a single column of pixels through a vertical signal line to agiven number, greater than one, of the column circuits; and selectivelyoutputting a signal of a selected pixel row to one of the given numberof the column circuits so that signals read out from the same pixel canbe sent to the same column circuit.
 18. The method of claim 17, whereinthe column circuit area is provided at both sides of said pixel arraysection.
 19. The method of claim 17 wherein the column circuit area isprovided at one side of said pixel array section.